David Waechter, PhD

Retired Engineer/Scientist, now Writer

Low-temperature crystallization of in situ phosphorus-doped low-pressure chemical-vapour deposited amorphous silicon


Journal article


David Waechter, N G Tarr
Canadian Journal of Physics, vol. 65, 1987, pp. 1030-1032

Cite

Cite

APA   Click to copy
Waechter, D., & Tarr, N. G. (1987). Low-temperature crystallization of in situ phosphorus-doped low-pressure chemical-vapour deposited amorphous silicon. Canadian Journal of Physics, 65, 1030–1032.


Chicago/Turabian   Click to copy
Waechter, David, and N G Tarr. “Low-Temperature Crystallization of in Situ Phosphorus-Doped Low-Pressure Chemical-Vapour Deposited Amorphous Silicon.” Canadian Journal of Physics 65 (1987): 1030–1032.


MLA   Click to copy
Waechter, David, and N. G. Tarr. “Low-Temperature Crystallization of in Situ Phosphorus-Doped Low-Pressure Chemical-Vapour Deposited Amorphous Silicon.” Canadian Journal of Physics, vol. 65, 1987, pp. 1030–32.


BibTeX   Click to copy

@article{waechter1987a,
  title = {Low-temperature crystallization of in situ phosphorus-doped low-pressure chemical-vapour deposited amorphous silicon},
  year = {1987},
  journal = {Canadian Journal of Physics},
  pages = {1030-1032},
  volume = {65},
  author = {Waechter, David and Tarr, N G}
}